Institute of Semiconductor Physics SB RAS

Name	Acad.	CI86	h	CImax	FA	CI7	FA7	FA7,max	Field	Russ Affil	Real residence	YF	Date
Antonova IV		370	8	25	239, 25	107	56	15	cond-mat	Semicond	Novosibirsk	1978	080624
Aseev AL	A	1094	16	296	269, 27	51	4	2	cond-mat	Semicond	Novosibirsk	1969	080624
Baklanov MR		1286	16	269	451, 99	778	96	43	cond-mat	Semicond	Leuven	1974	080623
Bolkhovityanov YB		726	12	68	576, 42	116	112	15	cond-mat	Semicond	Novosibirsk	1960	080723
Chaplik AV	C	1884	20	255	1151, 113	142	56	18	cond-mat	Semicond	Novosibirsk	1961	080709
Chernyshev AL		589	14	62	244, 42	129	110	31	cond-mat	Semicond	Novosibirsk	1993	080714
Dvurechenskii AV	C	1085	16	69	368, 40	263	75	28	cond-mat	Semicond	Novosibirsk	1974	080819
Entin MV		455	11	63	115, 23	110	51	23	cond-mat	Semicond	Novosibirsk	1969	080122
Govorov AO		1901	22	386	517, 56	1005	322	56	cond-mat	Semicond	Novosibirsk	1976	090418
Gritsenko VA		848	16	44	629, 43	232	114	28	cond-mat	Semicond	Novosibirsk	1976	090418
Kvon ZD		617	14	63	54, 8	143	18	8	cond-mat	Semicond	Novosibirsk	1980	081010
Latyshev AV	C	1088	13	317	924, 317	109	34	4	cond-mat	Semicond	Novosibirsk	1971	090420
Magarill LI		487	11	22	345, 19	96	38	10	cond-mat	Semicond	Novosibirsk	1966	090513
Nenashev AV		211	7	40	67, 25	101	22	16	cond-mat	Semicond	Novosibirsk	1990	090311
Nikiforov AI		915	16	81	87, 28	221	18	7	cond-mat	Semicond	Novosibirsk	1987	090427
Pchelyakov OP		892	16	81	239, 80	127	1	1	cond-mat	Semicond	Novosibirsk	1973	090427
Preobrazhenskii VV		613	12	185	34, 11	69	0	0	cond-mat	Semicond	Novosibirsk	1988	090427
Prinz VY		865	15	185	563, 185	293	98	25	cond-mat	Semicond	Novosibirsk	1980	090427
Shklyaev AA		812	14	112	382, 84	104	83	27	cond-mat mater-sci	Semicond	Tokyo	1977	090429
Yakimov AI		1004	17	81	727, 81	186	134	22	cond-mat	Semicond	Novosibirsk	1986	090507
Zhuravlev KS		661	14	48	225, 38	104	15	5	cond-mat	Semicond	Novosibirsk	1988	090507